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| EIC1314-7 ISSUED 11/13/2008 13.75-14.50 GHz 7-Watt Internally Matched Power FET .060 MIN. FEATURES * * * * * * * 13.75- 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +38.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .650.008 .512 GATE Excelics EIC1314-7 .060 MIN. DRAIN .319 YYWW SN .094 .382 .022 .045 .004 .070 .008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G IMD3 PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ 2400mA Gain at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ 2400mA Gain Flatness f = 13.75-14.50GHz VDS = 10 V, IDSQ 2400mA Output 3rd Order Intermodulation Distortion 2 f = 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L VDS = 10 V, IDSQ 65% IDSS f = 14.50 GHz Power Added Efficiency at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ 2400mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 38 5 TYP 38.5 6 MAX UNITS dBm dB 0.6 -41 -45 25 2400 4 -2.5 2.6 3000 6.5 -4.0 3 o dB dBc % mA A V C/W f = 13.75-14.50GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 38 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 50 Ohm gate resistor. 3) Overall Rth depends on case mounting. MAXIMUM RATING AT 25C SYMBOLS 1,2 PARAMETERS Drain-Source Voltage Gate-Source Voltage Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 35dBm 175 oC -65 to +175 oC 50W CONTINUOUS2 10V -4V @ 3dB Compression 175 oC -65 to +175 oC 50W Vds Vgs Pin Tch Tstg Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 issued November 2008 EIC1314-7 ISSUED 11/13/2008 13.75-14.50 GHz 7-Watt Internally Matched Power FET Output Power v.s Frequency Gain @1dB compression v.s Frequency 10 9 40 38 8 7 P 1d B /d B m G 1 d B /d B 36 6 5 4 3 34 32 2 1 30 13.6 13.7 13.8 13.9 14 14.1 14.2 14.3 14.4 14.5 14.6 0 13.6 13.8 14 14.2 14.4 14.6 Frequency/GHz Frequency/GHz P1dB v.s Frequency G1dB v.s Frequency Typical S-Parameters (T= 25C, 50 system, de-embedded to edge of package) VDS = 10 V, IDSQ = 2400mA Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 4 issued November 2008 EIC1314-7 ISSUED 11/13/2008 13.75-14.50 GHz 7-Watt Internally Matched Power FET THIRD-ORDER INTERCEPT POINT IP3 Power Dissipation v.s Temperature Total Power Dissipation / W 60 50 Pout [S.C.L.] (dBm) IP3 = Pout + IM3/2 f1 or f2 40 30 20 10 0 0 50 100 150 200 Case Temperature / C Pout Pin IM3 IM3 f1 f2 (2f1-f2) f1 f2 (2f2-f1) (2f2 - f1) or (2f1 - f2) Pin [S.C.L.] (dBm) IM3 v.s Output Power f 1=14.5 GHz, f 2=14.49 GHz -20 -30 -40 IM / dB 3 c -50 -60 -70 -80 13 16 19 22 Pout (S.C.L) / dBm 25 28 31 Typical IMD3 Data (T= 25C) VDS = 10 V, IDSQ 65% IDss Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 issued November 2008 EIC1314-7 ISSUED 11/13/2008 13.75-14.50 GHz 7-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 issued November 2008 |
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